IRG7CH54K10EF 1 www.irf.com ? 2012 international rectifier august 30, 2012 v ces = 1200v i c(nominal) = 50a t j(max) = 175c v ce(on) typ = 1.9v @ i c = 50a applications ? ? medium power drives ? ? ups ? ? hev inverter ? ? welding ? ? induction heating e c g n-channel base part number package type standard pack orderable part number form quantity IRG7CH54K10EF die on film wafer 1 IRG7CH54K10EF mechanical parameter ? die size 7.55 x 7.55 mm 2 minimum street width 75 m emiter pad size (included gate pad) see die drawing mm 2 gate pad size 0.509 x 0.503 area total / active 57/ 40.1 thickness 140 m wafer size 200 mm notch position 0 degrees maximum-possible chips per wafer 465 pcs. passivation front side silicon nitride front metal al, si (4m) backside metal ai (0.1m), ti (0 .1m), ni (0.4m), ag (0.6m) die bond electrically conductive epoxy or solder reject ink dot size 0.25 mm diameter minimum features benefits low v ce(on) and switching losses high efficiency in a wide range of applications and switching frequencies square rbsoa and maximum junction temperature 175c improved reliability due to rugged hard switching performance and higher power capability positive v ce (on) temperature coefficient excellent current sharing in parallel operation g c e gate collector emitter ? insulated gate bipolar transistor
? IRG7CH54K10EF ? 2 www.irf.com ? 2012 international rectifier august 30, 2012 parameter max. units v ce collector-emitter voltage, t j =25c 1200 v i c dc collector current ?? a i lm clamped inductive load current ?? 200 a v ge gate emitter voltage 30 v t j , t stg operating junction and storage temperature -40 to +175 c maximum ratings ? static characteristics (tested on wafers) . t j =25c ? parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 1200 ??? ??? v v ge = 0v, i c = 250a ? v ce(sat) collector-to-emitter saturated voltage ??? 1.25 1.5 v ge = 15v, i c = 10a, t j = 25c v ge(th) gate-emitter threshold voltage 5.0 ??? 7.5 i c = 2.4ma , v ge = v ce i ces zero gate voltage collector current ??? 1.0 25 a v ce = 1200v, v ge = 0v i ges gate emitter leakage current ??? ??? 200 na v ce = 0v, v ge = 30v parameter min. typ. max. units conditions v ce(sat) collector-to-emitter saturated voltage ??? 1.9 2.3 v v ge = 15v, i c = 50a , t j = 25c ??? 2.5 ??? v ge = 15v, i c = 50a , t j = 175c ? scsoa short circuit safe operating area 10 ??? ??? s v ge =15v, v cc =600v, ? r g =5 : , v p 1200v,t j =150c rbsoa ? reverse bias safe operating area ? full square ? ? t j = 175c, i c = 200a ? v cc = 960v, vp d 1200v rg = 5 : , v ge = +20v to 0v c iss input capacitance ??? 6240 ??? pf v ge = 0v c oss output capacitance ??? 230 ??? v ce = 30v c rss reverse transfer capacitance ??? 150 ??? ? = 1.0mhz q g total gate charge (turn-on) ? 290 ? nc i c = 50a ? q ge gate-to-emitter charge (turn-on) ? 60 ? v ge = 15v q gc gate-to-collector charge (turn-on) ? 130 ? v cc = 600v parameter min. typ. max. units conditions ?? t d(on) turn-on delay time ? 75 ? ns ? i c = 50a, v cc = 600v t r rise time ? 60 ? r g = 5 : , v ge =15v, l=200h t d(off) turn-off delay time ? 305 ? t j = 25c t f fall time ? 55 ? t d(on) turn-on delay time ? 70 ? i c = 50a, v cc = 600v t r rise time ? 60 ? r g = 5 : , v ge =15v, l= 200h t d(off) turn-off delay time ? 345 ? t j = 175c t f fall time ? 185 ?
? IRG7CH54K10EF ? 3 www.irf.com ? 2012 international rectifier august 30, 2012 die drawing notes: ?? the current in the application is limited by t jmax and the thermal properties of the assembly. ? not subject to production test- verified by design / characterization. ? values influenced by parasitic l and c in measurement. ?? v cc = 80% (v ces ), v ge = 20v, l = 19h, r g = 5 : . ?? refer to an-1086 for guidelines for measuring v (br)ces safely ?? die level characterization. 7.5500 [.2972] 7.5500 [.2972] 6.0360 [.2504] 5.8424 [.2300] 0.5095 [.0200] 0.5035 [.0198] 1. all dimensions are shown in millimeters [ inches] . 4. dimensional tolerances: 3. letter designation: 2. controlling dimension: millimeters notes: width < [.050] tolerance = + /- [.004] > [.050] tolerance = + /- [.008] > 1.270 tolerance = + /- 0.203 & length > [.0250] tolerance = + /- [.0010] > 0.635 tolerance = + /- 0.025 < [.0250] tolerance = + /- [.0005] < 0.635 tolerance = + /- 0.013 < 1.270 tolerance = + /- 0.102 & length overall die: width bonding pads: sk = source kelvin is = currentsense g = gate s = source e = emitter 5. die thickness = 0.140 [.0055] tol: = 0.007 [.0003] irg7ch54k10b reference:
? IRG7CH54K10EF ? 4 www.irf.com ? 2012 international rectifier august 30, 2012 data and specifications subject to change without notice. this product has been designed and qualified for industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 101n. sepulveda blvd, el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . additional testing and screening for customers requiring product supplied as known good di e (kgd) or requiring specific die level testing, please contact your local ir sales. shipping sawn wafer on film. please contact your local ir sales office for non? standard shipping options handling ?? product must be handled only at esd safe workstations . standard esd precautions and safe work environ- ments are as defined in mil-hdbk-263. ?? product must be handled only in a class 10,000 or better-designated clean room environment. ?? singulated die are not to be handled with tweezers. a va cuum wand with a non-metallic esd protected tip should be used. wafer/die storage ?? proper storage conditions are necessary to prevent product contamination and/or degradation after shipment. ?? note: to reduce the risk of contamination or degradati on, it is recommended that product not being used in the assembly process be returned to their original c ontainers and resealed with a vacuum seal process. ?? sawn wafers on a film frame are intended fo r immediate use and have a limited shelf life. . further information for further information please contact your loca l ir sales office or em ail your enquiry to http://die.irf.com
|
